schottky diode features z low turn-on voltage z fast switching bas70t marking: 7c BAS70-04T marking: 7d bas70-05t marking: 7e bas70-06t marking: 7f maximum ratings @t a =25 parameter symbol limits unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 70 v forward continuous current i fm 70 ma non-repetitive peak forward surge current @ t = 1.0s i fsm 100 a power dissipation p d 150 mw thermal resistance junction to ambient air r ja 833 /w storage temperature t stg -65-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) r i r = 10a 70 v reverse voltage leakage current i r v r =50v 100 na forward voltage v f i f =1ma i f =15ma 410 1000 mv diode capacitance c d v r =0, f=1mhz 2 pf reveres recovery time t rr i f =i r =10ma,i rr =0.1xi r , r l =100 5 ns sot-523 bas7 0t/-04t/-05t/-06t 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu bas7 0t/-04t/-05t/-06t
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